| HETEROJUNCTION ALmGa(1-m)N/GaN TRANSISTOR CURRENT-VOLTAGE CHARACHTERISTICS INCLUDING THE POLARIZATION EFFECT |
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M. ALSHAIK-AID, A. TELIA, A. SOLTANI |
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| DRIFT-DIFFUSION MOSFET MODELLING |
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A. BEKADDOUR, B. BOUAZZA, N. E. CHABANNE-SARI |
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| ON SILICON ON INSULATOR TECHNOLOGY AND DEVICES |
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K. BENNAMANE, A. BENFDILA, H. ACHOUR, A. LAKHLEF |
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| DESIGN AND HARDWARE IMPLEMENTATION OF EMBEDDED CONTROLLER DEVICES |
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S. BEN OTHMAN, S. BEN SAOUD |
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| RTOS EVOLUTION AND HARDWARE MICROKERNEL IMPLEMENTATION BENEFITS |
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A. K. BEN SALEM, S. BEN SAOUD |
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| ON THE THRESHOLD VOLTAGE EVOLUTION FOR SUBMICRONIC MOS TRANSISTORS |
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R. BENSEGUENI, S. LATRECHE |
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| MOBILITY EXTRACTION IN UNIAXIALLY AND BIAXIALLY STRAINED N-MOSFETs |
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T. BENSIDHOUM, F. LIME, G. GHIBAUDO |
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| CHARACTERIZATION OF THE SHORT CHANNEL EFFECT ON THE THRESHOLD VOLTAGE IN DEEP SUB-MICRON MOSFETs |
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A. LAKHLEF, A. BENFDILA, H. ACHOUR, K. BENNAMANE |
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| RECENT TRENDS IN IGBT TECHNOLOGY |
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B. SALHI, A. BENFDILA |
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| BALLISTIC TRANSPORT MODELING IN NANO-MOSFETs |
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H. ACHOUR, A. BENFDILA |
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| COMPUTATIONAL SOLUTION OF COUPLED POISSON-SCHRODINGER EQUATIONS IN SEMICONDUCTOR FIELD EFFECT TRANSISTOR NANOSTRUCTURE |
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O. BOUDIB, S. M. MIMOUNE, K. SRAIRI |
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| SEMICONDUCTOR FIELD EFFECT TRANSISTOR NANOSTRUCTURE |
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O. BOUDIB, S. M. MIMOUNE, K. SRAIRI |
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| IMPACT OF BIAXIALLY STRAIN ON THE LOW FREQUENCY NOISE OF SILICON n-MOSFETs WITH ULTRA THIN GATE OXIDES |
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T. BOUTCHACHA, G. GHIBAUDO, T. CONTARET |
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| THE INTERFACE STATES AT SiO2/POLYSILICON AND SiO2/MONOSILICON INTERFACE INFLUENCE ON N-POLYSILICON/OXIDE/N-MONOSILICON CAPACITANCE |
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H. DIB, Z. BENAMARA, Z. KARI, F. RAOULT |
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| A BI-FACIAL SILICON SOLAR CELL PARAMETERS DETERMINATION BY IMPEDANCE SPECTROSCOPY |
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A. DIENG, A. DIAO, S. MBODJI, I. LY, G. SISSOKO |
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| PHYSICAL PHENOMENA IN SUPERSATURATED MESFET |
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S. DJELLOUL, B. MARIR, M. MARIR |
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| A SIMPLE FPGA-BASED LOSSLESS WIRELESS TRANSMITTER/RECEIVER USING THE RESIDUE NUMBER SYSTEM |
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M. EKONE SONE, N. NTOMAMBANG NINGO |
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| QUASI ONE DIMENSIONAL SIMULATION OF HETEROJUNCTION FET |
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O. EL MANSOURI, F. KEBAILI, M. MARIR, B. MARIR |
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| DESIGN AND CONSTRUCTION OF AN INTELLIGENT TRANSISTOR ANALYZER |
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S. O. EZEONU, U. F. SHUAIBU |
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| TRAP CHARACTERIZATION AT DIFFERENT TEMPERATURES IN AlGaN/GaN/Si HEMT STRUCTURE BY THE CONDUCTANCE METHOD |
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Z. FARES, A. TELIA, A. SOLTANI |
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| CHARACTERIZATION OF SLOW TRAP IN MOS CAPACITOR |
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N. GUENIFI, D. BAUZA |
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| LOW FREQUENCY DISPERSION OF OUTPUT ADMITTANCE IN GaAs MESFETs |
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Z. HADJOUB, K. CHEIKH, A. DOGHMANE |
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| THE NUMERICAL SIMULATION OF THE CONSTANT PHOTOCURRENT METHOD (CPM) IN HYDROGENATED AMORPHOUS SILICON |
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K. HAMMOUDI, A. FEDALA, T. SMAIL, M. AOUCHER |
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| ICA-BASED RECEIVER FOR AN OPTIMAL SEPARATION OF CDMA SIGNALS |
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A. HAMZA, S. CHITROUB |
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| I-V CHARACTERIZATION FOR A DEEPER COMPREHENSION OF BURIED DOUBLE JUNCTION COLOR DETECTOR BEHAVIOR |
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F. HANED, M. BEN CHOUIKHA, G. ALQUIE |
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| MODELLING AND CHARACTERIZATION OF GaAs MESFET |
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F. KEBAILI, O. EL MANSOURI, B. E. MARIR, M. MARIR |
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| A STUDY OF ERASING IN PROGRAMMABLE ELECTRICALLY ERASABLE READ ONLY MEMORY (EEPROM) WITH VERY THIN OXIDE TUNNEL |
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S. LATRECHE, A. M. BOUNAB, M. BENOUAKTA |
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| GROWTH OF SiO2 FILMS FOR MICROELECTRONICS APPLICATIONS: EXPERIMENTAL AND ANALYTICAL STUDY OF THE PROCESS PARAMETERS |
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A. M. MAHAJAN, J. P. BANGE, B. N. JOSHI, D. K. GAUTAM |
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| A THEORY OF BASIS FOR CALCULATION AND MODELLING OF NOISE IN SUB-MICRON MOSFET TRANSISTORS |
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S. MOUETSI, M. BOUCHEMAT, M. SELLAMI, C. ZIGHA |
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| COMPLEX PERMITTIVITY EXTRACTION USING TWO TRANSMISSION LINE S-PARAMETER MEASUREMENTS |
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M. MOUKANDA, F. NDAGIJIMANA, J. CHILO, P. SAGUET |
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| COAXIAL PROBE FIXTURE USED FOR COMPLEX PERMITTIVITY MEASUREMENTS OF THIN LAYERS |
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M. MOUKANDA, F. NDAGIJIMANA, J. CHILO, P. SAGUET |
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| MODELING AND SIMULATION OF THE BORON DIFFUSION IN THE SILICON MONO-CRYSTAL |
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F. OKBA, R. MEZOUAR, A. MERABET |
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| AN AD-HOC IP FUNCTIONAL VERIFICATION PROCEDURE |
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A. K. OUDJID, D. BENAMROUCHE, R. TIAR, M. GOUDJIL, A. LIACHA |
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| ON THE FIELD DEPENDENCE OF TDDB: THICK DIELECTRICS RELIABILITY |
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S. OUSSALAH, F. NEBEL, B. DJEZZAR |
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| ANOMALOUS ELECTRICAL TRANSPORT AT NON-IDEAL AU/EPITAXIAL n-GaAs SCHOTTKY JUNCTIONS ON n-Ge SUBSTRATES AT LOW TEMPERATURES |
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N. PADHA, M. SHARMA, R. CHADHA, R. SACHDEVA, S. B. KRUPANIDHI |
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| STUDY OF THE CHARACTERISTICS I-V JUNCTIONS PN CONTAINING SiC |
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S. RACHEDI, H. BOUCHENAFA, K. GHAFFOUR |
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| PROCESS FLOW MECHANISM FOR A NOVEL TRENCH GATE FLIMOSFET |
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R. VAID, R. GUPTA, N. PADHA |
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| THE EFFECT OF SHORT CHANNEL ON NANOSCALE SOI MOSFETs |
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D. RECHEM, S. LATRECHE |
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| DESIGN CHOICES FOR FOLDED CASCODE OPERATIONAL TRANS-CONDUCTANCE AMPLIFIERS |
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D. REDOUANE, N. E. BOUGACHEL |
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| DESIGN OF AN OPERATIONAL TRANS-CONDUCTANCE AMPLIFIER IN CMOS TECHNOLOGY WITH A 114 dB GAIN AND A SETTLING TIME OF 2.97ns |
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D. REDOUANE, N. E. BOUGACHEL |
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| ON THE SIGNAL PROPAGATION DELAY STUDY FOR THE DEEP SUBMICRON CMOS INTEGRATED CIRCUIT |
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H. SAHRAOUI, A. G. BOUAZZA, B. BOUAZZA, K. E. GHAFFOUR, N. E. CHABANE SARI |
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| MEASUREMENT OF SQUARE RESISTANCE IN SITU OF SnO2: F THIN FILM WITH ANNEALING AT HIGH TEMPERATURE UNDER AIR |
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H. TAHI, M. BOUMAOUR, R. TALAIGHIL, M. S. BELKAID, M. GOUDJIL |
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| STUDY OF THE CAPACITIVE BEHAVIOUR OF THE MIS STRUCTURE BASED ON COMPOUNDS III-V |
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S. TAIK, S. TIZI, Z. BENAMARA, M. CHELLALI, M. AMRANI, B. GRUZZA |
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| PHYSICAL AND ELECTRICAL PHENOMENA INDUCED IN SUB-MICRONIC MOSFETs SUBJECTED TO STRESS |
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R. TALMAT, A. BENFDILA |
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| SYNTHESIS OF GOLD NANOPARTICLES DECORATED CARBON NANOTUBE HYBRIDS |
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A. TELLO, R. SEGURA, G. CARDENAS, P. HABERLE |
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| NUMERICAL MODELING OF THE DC AND AC-CPM FOR THE DETERMINATION OF DENSITY OF GAP-STATES DISTRIBUTION IN HYDROGENATED AMORPHOUS SILICON-ULTRA HIGH FREQUENCY EFFECT |
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T. TIBERMACINE, A. MERAZGA |
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| CHARACTERIZATION OF MAGETORESISTIVE SENSORS USED FOR ROTATION DETECTION IN LAB-ON-A-CHIP APPLICATIONS |
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M. VOLMER, M. AVRAM |
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| DESIGN AND OPTIMISATION OF CIRCULAR AND INDUCTORS FOR SILICON-BASED RFIC APPLICATION |
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A. ZIOUCHE, M. T. BELAROUSSI |
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| ELECTRICAL CHARACTERIZATION OF THE DIODES IN SiC BY ADMITTANCE TECHNIQUE |
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H. BOUCHENAFA, S. RACHEDI, K. GHAFFOUR |
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| ROLE OF +19F IMPLANTATION TO GROW MULTIPLE GATE OXIDES FOR NANO-CMOS TECHNOLOGY |
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S. K. SHARMA, B. PRASAD, D. KUMAR, RAJ KUMAR |
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| POLARIZATION SHIFT OF TRANSMITTED AND REFLECTED OPTICAL WAVES IN BIAXIAL DIELECTRIC HETERO-STRUCTURE NaNO2/SbSi |
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D. BRIA, N. OUCHANI, B. DJAFARI-ROUHANI, A. NOUGAOUI |
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| A 1024-BIT IMPLEMENTATION OF THE FASTER MONTGOMERY MULTIPLIER USING VHDL |
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D. N. AMANOR |
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| RECONFIGURABLE COMPUTING USING FPGA: STATE OF THE ART AND POTENTIAL FOR SYSTOLIC ARRAY APPLICATIONS |
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A. GOUGAM, D. BENAZZOUZ |
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| RECONFIGURABLE HIGH THROUGHPUT FUNCTION EVALUATION FOR VIRTEX-2 FPGA |
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M. ANANE, H. BESSALAH, N. ANANE |
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| APPLICATION OF FUZZY LOGIC TO VLSI CELLS PLACEMENT |
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H. AZIZI, K. BENMAHAMMED, L. ZOUAOU |
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| SIMULATION OF THE BEHAVIORAL MODELS OF COMPONENTS OPTOELECTRONICS IN LANGUAGE VHDL-AMS |
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F. Z. BAOUCHE, F. HOBAR, M. MOUSSAOUI, S. RACHIDA |
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| BOR-FDTD ANALYSIS OF GUIDED MODES IN SUB-EDWAVELENGTH COAXIAL METALLIC WAVEGUIDES |
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A. BELKHIR, F. I. BAIDA, D. VAN LABEKE, O. LAMROUS |
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| NEW STRUCTURES IMPROVING GaAs MESFETS INTEGRATED CIRCUITS PERFORMANCES |
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M. S. BENBOUZA, N. MERABTINE, C. KENZAI-AZIZI |
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| ADAPTIVE ACQUISITION OF PN SEQUENCE IN NONFADING AWGN CHANNEL |
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S. BENKRINAH, M. BARKAT, M. BENSLAMA, A. BENMEDDOUR, R. BEKHAKHECHA |
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| PHOTOLUMINESCENCE OF ZnSe NANOCRYSTALS ELABORATED BY SPIN-COATING METHOD |
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A. AKSAS, A. CHELOUCHE, B. BOUDINE, O. HALIMI, D. DJOUADI |
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| DIFFUSION OF ELASTIC WAVES BY AN ATOMIC WELL IMPLANTED IN A THIN FILM COMPOSED OF TWO ATOMIC LAYERS |
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S. AMOUDACHE, O. RAFIL, B. BOURAHLA, R. TIGRINE |
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| PHONON MULTIPLEXING THROUGH 1D CHAINS AND PHONON FLOW THROUGH 1D CHANNELS AND NANOSPHERES |
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A. AVILA, D. REYES |
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| ZnO THIN FILMS ELABORATION AND CHARACTERIZATION BY SPUTTERING |
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L. BAGHRICHE, M. S. AIDA, N. BOUHSSIRA |
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| TEMPERATURE BEHAVIOUR OF SOME p-n Si SOLAR CELL'S PHYSICAL QUANTITIES |
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M. BASHAHU, L. BAPFUTWABO |
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| 3-D SIMULATION AND MODELLING OF THE DEEP CENTRES EFFECT ON THE TRANSPORT PHENOMENA INSIDE A GaAs SEMI INSULATING P+VN+ STRUCTURE |
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B. BOUABDALLAH, B. BENICHOU, R. MENEZLA, S. MANSOURI |
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| THE QUATERNATE Cu(In,Ga)Se2 FOR THIN FILM PHOTOVOLTAIC CELL |
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S. BOUCHEKOUF, B. BRAHMA, L. KEMMOUCHE, M. MARIR, B. MARIR |
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| SYNTHESIS OF HYBRID NANOPARTICLES ORGANIC/INORGANIC: FONCTIONNALISATION AND QUANTIFICATION |
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S. M. CHABANE SARI, K. BENMANSOUR, F. VOCANSON, R. LAMARTINE, O. TILLEMENT, P. PERRIAT |
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| ELECTROCHEMICAL DEPOSITION OF NICKEL THIN FILMS ONTO MONOCRISTALLINE SILICON |
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A. CHENNA, N. BENBRAHIM, A. KADRI, Y. DAHMANE, Y. BELAROUSSI |
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| ENHANCEMENT OF PHOTOLUMINESCENCE OF ZINC OXIDE NANOCRYSTALS IN POLYMER MATRIX |
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M. EGBLEWOGBE, R. D. BAETA |
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| SOME ELECTRICAL PROPERTIES OF ZnO NANOCRYSTALS IN PEO MATRIX |
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M. EGBLEWOGBE, R. D. BAETA |
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| SILICON NITRIDE FILMS FOR PHOTOVOLTAIC APPLICATION DEPOSITED IN AN INDUSTRIAL PECVD |
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A. EL AMRANI, I. MENOUS, L. MAHIOU, A. TOUATI, A. LEFGOUM |
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| STRUCTURAL AND OPTICAL CHARACTERISATION OF THIN FILMS OF THE POLYMER POLYSTYRENE DOPED BY SEMICONDUCTOR NANOCRYSTALS OF CdS |
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B. HARIECHE, B. TROUDI, A. CHAIB, B. BOUDINE, O. HALIMI |
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| CIS AND CIGS THIN FILMS FOR LOW-COST SOLAR CELLS |
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A. IHLAL, K. BOUABID, D. SOUBANE, M. NYA, O. AIT-TALEB-ALI, Y. AMIRA, A. OUTZOURHIT, G. NOUET |
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| MICROSTRUCTURE STUDY OF ELECTRODEPOSITED Ni-Cu/Cu SUPERLATTICES |
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I. KAZEMINEZHAD, A. BRATI |
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| SYNTHESIS OF ELECTRODEPOSITED NI-RICH/Cu MULTILAYERED NANOWIRES |
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I. KAZEMINEZHAD, G. NABIYOUNI |
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| PSEUDO-POTENTIAL CALCULATION OF THE ELECTRONIC AND OPTICAL PROPERTIES OF GaXAlYInl-X-YAs |
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A. LOUHADJ, H. ABID |
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| CHARACTERIZATION OF BI-LAYERS POLYSILICON/NIDOS THIN FILMS |
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R. MAHAMDI, L. SACI, F. MANSOUR, P. TEMPLE-BOYER, E. SCHEID |
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| NEGATIVE CAPACITANCE AND d-RELAXATION IN DNA MOLECULES CONFINED IN NANOPORES |
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S. K. MANDAL |
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| SUBMICRONIC HOLES ETCHING IN THE CRYOGENIC PROCESS |
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N. M. MAAZA, R. DUSSART, T. TILLOCHER, C. DULUARD, X. MELLHAOUI, P. LEFAUCHEUX, P. RANSON |
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| A MONTE CARLO SIMULATION STUDY OF BORON IMPLANTS PROFILES INTO NiDoS-LPCVD THIN SOLID FILMS |
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S. MERABET, M. BOUKEZZATA |
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| BULK PHONON SCATTERING BY PERTURBED QUASI-3D MULTICHANNEL WAVEGUIDES |
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M. S. RABIA |
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| OPTICAL PROPERTIES OF ZnSe NANODOTS EMBEDDED IN SiO2 THIN FILMS |
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S. D. HUTAGALUNG, L. S. CHOON |
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| TITANIA NANOTUBES PREPARED BY SYNTHESIS METHOD FOR DYE SENSITIZED ELECTROCHEMICAL SOLAR CELLS |
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J. SIMIYOU, J. M. MWABORA, B. O. ADUDA, S-E. LINDQUIST, A. HAGFELDT, G. BOSCHLOO |
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| FABRICATION OF MICRON-SIZED POLYMER SPHERES BY PRECIPITATION POLYMERIZATION TECHNIQUE |
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Y. TUNC, E. BAYKARA, K. ULUBAYRAM |
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| SIMULATION OF P-I-N PHOTODETECTOR ON THE BASIS OF PURE GERMANIUM AND SiGe ALLOY (95% Ge) FOR ABSORPTION OF LAMBDA = 1.3 MICROMETER |
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S. BENZEGHDA, T. BOUCHEMAT, F. HOBAR |
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| ANTIFERROMAGNETIC CoRh2O4 NANOPARTICLE: A UNIQUE SYSTEM TO STUDY SURFACE MAGNETISM |
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R. N. BHOWMIK, R. RANGANATHAN |
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| FACTORS AFFECTING THE PRECISION OF ELECTROSTATIC COMPUTATION OF 3D MEMS STRUCTURES |
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N. MAJUMDAR, S. MUKHOPADHYAY |
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| THE DYNAMICS OF NANOPARTICLES IN THE SURFACE-STABILIZED FERROELECTRIC LIQUID CRYSTAL CELL |
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M. A. SHAHZAMANIAN, E. KADIVAR, Kh. RAHIMI |
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